Planar technology for producing light-emitting devices
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United States of America Patent
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Dec 7, 1999
Grant Date -
N/A
app pub date -
Jan 14, 1999
filing date -
Jan 16, 1998
priority date (Note) -
Expired
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Abstract
The present invention relates to a novel planar technology approach utilizing ion implantation to improve the fabrication procedure for manufacturing nitride light-emitting and laser diodes. The simplified processing significantly reduces the costs of manufacturing these devices and allows flip-chip bonding to be used for efficient heat removal, yielding much brighter LEDs and more powerful lasers.
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