Wafer carriers for epitaxial growth processes
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United States of America Patent
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Dec 14, 1999
Grant Date -
N/A
app pub date -
Sep 30, 1996
filing date -
Jun 10, 1996
priority date (Note) -
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Abstract
A wafer carrier/susceptor combination for use in an epitaxial deposition process has a configuration which provides greater thermal conductivity between the susceptor and the wafer carrier in regions substantially underlying the wafers than in regions not underlying the wafers. This difference in thermal conductivity is produced by configuring the wafer carrier or susceptor so that the lower surface of the wafer carrier is disposed closer to the susceptor in regions substantially underlying the wafers than in at least some regions not underlying the wafers. By controlling the thermal conductivity so that it is greater in certain regions than in other regions, the temperature difference between the wafers and the surface of the wafer carrier can be reduced, and a more uniform temperature distribution across the surface of the wafer can be achieved. As a result, the combination may be used to deposit a more uniform coating across the entire surface of each wafer.
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