Metal to metal capacitor and method for producing same

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United States of America Patent

PATENT NO 6001702
SERIAL NO

09014934

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present invention provides a method for fabricating a capacitor within a semiconductor device comprising the steps of forming openings in an oxide dielectric to reach a lower conductor layer which will serve as a lower conductor plate of the capacitor; depositing capacitor electrode material, such as tungsten to fill the openings to form a capacitor electrode and planarizing the filled openings using chemical/mechanical polish; depositing a selected oxide capacitor dielectric over the capacitor electrodes and patterning the capacitor dielectric with photoresist to leave dielectric covering the area of the capacitor electrodes; stripping away the photoresist; adding an upper conductor layer on top of the capacitor dielectric to serve as the top plate of the capacitor. The above steps may be repeated to form multiple layers of capacitors within the semiconductor device.

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Patent Owner(s)

Patent OwnerAddress
INTERNATIONAL BUSINESS MACHINES CORPORATIONARMONK NY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cook, Robert K Poughkeepsie, NY 8 139
Gruszecki, Craig R Hopewell Junction, NY 3 58
Passaro, Mark A Hopewell Junction, NY 2 35
Scholl, Frederick A Hopewell Junction, NY 3 41

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