Fabricating method of a metal gate
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United States of America Patent
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Dec 14, 1999
Grant Date -
N/A
app pub date -
Jul 22, 1998
filing date -
May 22, 1998
priority date (Note) -
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Abstract
A method of fabricating a metal gate includes forming a gate insulating layer on a provided substrate, forming a PVD titanium nitride layer on the gate insulating layer, forming a CVD titanium nitride layer on the PVD titanium nitride layer, and forming a CVD tungsten layer on the CVD titanium nitride layer. The CVD tungsten layer, the CVD titanium nitride layer, and the PVD titanium nitride layer are later patterned to form the metal gate.
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