Method for making field effect devices and capacitors with improved thin film dielectrics and resulting devices
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United States of America Patent
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Dec 14, 1999
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N/A
app pub date -
Apr 15, 1998
filing date -
Apr 15, 1998
priority date (Note) -
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Abstract
An electronic device is formed by depositing a thin film of high dielectric constant material on a silicon substrate, exposing the structure to plasma, and then forming the top electrode. The plasma substantially reduces the density of charge traps at the dielectric/silicon interface. Advantageously, the dielectric film is passivated with a nitrogen-containing material before forming the top electrode to prevent interdiffusion between the electrode and the dielectric.
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