Process to improve adhesion of cap layers in integrated circuits
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United States of America Patent
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Dec 14, 1999
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app pub date -
Jul 22, 1998
filing date -
Jul 22, 1998
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Abstract
A method for making a multi-layered integrated circuit structure, includes depositing a methyl doped silicon oxide layer over a substrate. SiO.sub.2 skin is deposited on the methyl doped silicon oxide layer by decreasing the flow of CH.sub.3 SiH.sub.3, increasing the flow of SiH.sub.4 and keeping the flow of H.sub.2 O.sub.2 constant for a period of time. Finally, a cap layer is deposited which adheres to the SiO.sub.2 skin.
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