Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing

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United States of America Patent

PATENT NO 6007635
SERIAL NO

08979604

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A platform for processing a substrate in a processing chamber of a reactor includes an annular body with a recessed, generally planar substrate support surface for supporting the substrate during processing. The platform includes at least one coupler for releasably securing the platform to a platform support surface positioned inside the processing chamber. The platform is releasably secured to the platform support surface in the processing in a manner which permits unrestrained relative thermal expansion of the platform. The substrate support surface is sized to permit unrestrained radial thermal expansion of the substrate and, preferably, recessed to support the device side of the substrate substantially flush with an upper surface of the platform. The platform is suitable for use in a processing reactor which includes a heater housing and an outer reactor housing. The heater housing encloses a heater assembly and provides the support surface for supporting the platform during processing. The reactor also includes at least one gas injector for injecting at least one processing gas into the processing chamber for deposition on the substrate.

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Patent Owner(s)

Patent OwnerAddress
KOKUSAI SEMICONDUCTOR EQUIPMENT CORPORATION1957 CONCOURSE DRIVE SUITE C SAN JOSE CA 95131-1708

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mahawili, Imad Grand Rapids, MI 49 2983

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