Deposition of highly doped silicon dioxide films
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United States of America Patent
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Dec 28, 1999
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N/A
app pub date -
Jun 19, 1997
filing date -
Jun 19, 1997
priority date (Note) -
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Abstract
The specification describes sputtering processes for the deposition of silicon dioxide films doped with high levels of oxides or other materials to alter the optical and/or electrical characteristics of the films. Sol gel methods are used to prepare composite sputtering targets of ultra fine mixtures of materials so the composition of the sputtered films replicate the composition of the target.
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