Double stair-like capacitor structure for a DRAM cell
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United States of America Patent
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-
Jan 4, 2000
Grant Date -
N/A
app pub date -
Oct 31, 1997
filing date -
Oct 31, 1997
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The double-stair-like capacitor formed on a semiconductor substrate includes a first storage node having stair-like structures in cross section view to increase the area of the first storage node. A dielectric layer substantially conformally covers a surface of the first storage node. A second storage node having a surface substantially conformally contacts the dielectric layer.
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