Metal oxide stack for flash memory application
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United States of America Patent
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Jan 4, 2000
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N/A
app pub date -
Sep 16, 1998
filing date -
Sep 16, 1998
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Abstract
In order to alleviate lifting problems and to reduce the height of the stack, a tungsten layer is formed on a interpoly dielectric layer, such as an ONO layer, which separates the conductive control gate from a polysilicon floating gate that is in turn formed on a tunnel oxide layer. The tungsten layer is protected by the provision of a tungsten silicide cap which is formed over the tungsten layer and which therefore prevents oxidation of the metal. The two tungsten based layers are such as to replace the second polysilicon layer which is normally used to form the floating gate.
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