Method of handling a substrate after sputtering and sputtering apparatus
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United States of America Patent
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-
Jan 11, 2000
Grant Date -
N/A
app pub date -
May 21, 1997
filing date -
May 21, 1996
priority date (Note) -
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status (Latency Note)
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Abstract
A substrate which has been heated to a predetermined temperature by a heating unit during sputtering is transferred into an unload-lock chamber having a vacuum pump system and a vent gas introducing system. The unload-lock chamber is provided with a cooling stage which makes surface contact with the substrate so as to forcedly cool the substrate to a predetermined temperature. The substrate is placed on the cooling stage and forcedly cooled. After the substrate is cooled to the predetermined temperature or lower, the vent gas introducing system is operated so that the interior of the unload-lock chamber is returned to the atmospheric pressure ambient. Since the substrate under a high temperature condition does not make contact with the atmospheric pressure ambient, film properties are prevented from being varied.
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