Tantalum amide precursors for deposition of tantalum nitride on a substrate
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United States of America Patent
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Jan 18, 2000
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N/A
app pub date -
Jan 23, 1998
filing date -
Jan 23, 1998
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Abstract
Tantalum and titanium source reagents are described, including tantalum amide and tantalum silicon nitride precursors for the deposition of tantalum nitride material on a substrate by processes such as chemical vapor deposition, assisted chemical vapor deposition, ion implantation, molecular beam epitaxy and rapid thermal processing. The precursors may be employed to form diffusion barrier layers on microlectronic device structures enabling the use of copper metallization and ferroelectric thin films in device construction.
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