Method of processing semiconductor manufacturing exhaust gases
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United States of America Patent
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Jan 25, 2000
Grant Date -
N/A
app pub date -
Mar 30, 1998
filing date -
Mar 30, 1998
priority date (Note) -
Expired
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Abstract
A method of processing semiconductor manufacturing exhaust gases for recovering at least hexafluoroethane in which a feed stream composed of the exhaust gases is passed through an adsorbent bed selected to adsorb oxygen, and also nitrogen if present, but not to appreciably adsorb the hexafluoroethane. As a result, a product stream, discharged from the adsorbent bed, has a higher concentration of hexafluoroethane than in the feed stream. In one embodiment, only a single adsorbent such as carbon molecular sieve is provided to adsorb the oxygen or a modified 4A zeolite could be used to adsorb both oxygen and nitrogen. When nitrogen is a potential constituent, layers of carbon molecular sieve and zeolite are provided to adsorb the oxygen and then the nitrogen, respectively. A third adsorbent, preferably 5A zeolite may be provided in addition to the foregoing two adsorbents to also adsorb any carbon tetrafluoride produced as a by-product.
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