Method for making thin film transistor
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United States of America Patent
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Feb 1, 2000
Issued Date -
N/A
app pub date -
Jun 19, 1998
filing date -
Jun 19, 1997
priority date (Note) -
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Abstract
In production of a thin film transistor, a gate electrode is formed on an insulating substrate. A gate nitride film and a gate oxide film are formed on the gate electrode. A semiconductor thin film is formed on the gate oxide film. The semiconductor thin film is irradiated with laser light for crystallization. The growth of the crystal grains in a first section of the semiconductor thin film lying just above the gate electrode is more significant than that of the crystal grains in a second section of the semiconductor thin film lying in a position other than just above the gate electrode. An impurity is selectively doped into the second section of the semiconductor thin film to form a source region and a drain region, while the first section of the semiconductor thin film is left without modification as a channel-forming region.
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