Channel-type stack capacitor for DRAM cell
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United States of America Patent
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Feb 1, 2000
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N/A
app pub date -
Apr 14, 1998
filing date -
Dec 6, 1995
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Abstract
The electrode of a storage capacitor of a DRAM cell lies diagonally along the memory cell. The diagonal layout makes the length of the capacitor longer than either the x-dimension or the y-dimension of the memory cell, thus increasing the storage capacitance.
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