Enhanced reactive DC sputtering system
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United States of America Patent
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Feb 15, 2000
Issued Date -
N/A
app pub date -
Feb 17, 1998
filing date -
Dec 30, 1992
priority date (Note) -
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Abstract
An enhanced reactive plasma processing method and system useful for deposition of highly insulating films. A variety of alternative embodiments are allowed for varying applications. In one embodiment, a tapped inductor is switched to ground or some common level to achieve substantial voltage reversal of about 10% upon detection of an arc condition. This reversal of voltage is maintained long enough to either afford processing advantages or to allow restoration of uniform charge density within the plasma prior to restoration of the initial driving condition. A technique for preventing arc discharges involving periodically either interrupting the supply of power or reversing voltage is effected through a timer system in the power source.
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