Importance

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Abstract

A semiconductor apparatus formed on a semiconductor substrate includes a first active region in the substrate, and a second active region adjacent to the surface of the substrate separated from the first active region by a channel region. A gate oxide region may overlie at least a portion of the first and second active regions. The apparatus further includes a gate positioned over the channel region and having a first end and a second end respectively associated with the first and second active regions. The gate includes a first low conductive region and a second low conduction region at said first and second ends, respectively. A method for making the transistor structure of the present invention is also provided. In one aspect, the invention comprises: forming a transistor region on a silicon substrate, the region including a first and second spacers on a first side and a second side of the region, respectively, the spacers overlying a first oxide layer on the surface of the substrate; etching the first oxide layer leaving a first and second gaps between the first and second spacers, respectively, and the silicon substrate; forming a gate oxide layer overlying the surface of the substrate in the transistor region, the gate oxide having a thickness; and filling the transistor region with polysilicon to cover the gate oxide region.

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First Claim