Low resistance gate electrode layer and method of making same
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United States of America Patent
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Feb 15, 2000
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N/A
app pub date -
Dec 23, 1997
filing date -
Dec 23, 1997
priority date (Note) -
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Abstract
A MOSFET having a low resistance gate electrode structure includes silicided source and drain regions, and a silicided gate electrode wherein the thickness of the silicide layer superjacent the gate electrode is substantially thicker than the silicide layers overlying the source and drain regions. A process in accordance with the present invention decouples the silicidation of MOSFET source/drain regions from the silicidation of the gate electrode.
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