Two-parts ferroelectric RAM
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United States of America Patent
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Feb 15, 2000
Grant Date -
N/A
app pub date -
Nov 12, 1996
filing date -
Nov 12, 1996
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of fabricating a complex IC in two parts and making the electrical connections between them afterwards is described. By this method, a ferroelectric RAM is fabricated in two parts, where the first part has an array of unit cells each of those has a transistor or a group of transistors serving the purpose of selecting one address for data recording and has an array of electrically conductive pads facing upward, protruding out from the surface of the first part, where the second part consists of a data-recording layer on another substrate. The data-recording layer consists of ferroelectric material and is pressed on the first part during data writing and reading.
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