Process for producing planar dielectrically isolated high speed pin photodiode
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United States of America Patent
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Feb 22, 2000
Grant Date -
N/A
app pub date -
Feb 5, 1998
filing date -
Feb 5, 1998
priority date (Note) -
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Abstract
A method is shown for producing a PIN photodiode wherein an intrinsic layer of the photodiode can be made arbitrarily thin. A fabrication substrate is lightly doped to have a first conductivity type in order to form the intrinsic layer of the photodiode. A first active region of the photodiode having the first conductivity type is formed on a first surface of the fabrication substrate. An oxide layer is also formed upon the first surface of the fabrication substrate. A handling substrate is bonded to the first surface of the fabrication substrate. A second surface of the fabrication is then lapped to a obtain a preselected thickness of the intrinsic layer. And a second active region of the photodiode having a second conductivity type is formed on the second surface of the fabrication substrate.
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