Process for treating damaged surfaces of low dielectric constant organo silicon oxide insulation material to inhibit moisture absorption
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United States of America Patent
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Feb 22, 2000
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N/A
app pub date -
Mar 29, 1999
filing date -
Mar 29, 1999
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Abstract
A process is described for treating damaged surfaces of a low dielectric constant organo silicon oxide insulation layer of an integrated circuit structure to inhibit absorption of moisture which comprises treating such damaged surfaces of said organo silicon oxide insulation layer with a hydrogen plasma. The treatment with hydrogen plasma causes hydrogen to bond to silicon atoms with dangling bonds in the damaged surface of the organo silicon oxide layer to replace organic material severed from such silicon atoms at the damaged surface, whereby absorption of moisture in the damaged surface of the organo silicon oxide layer, by bonding of such silicon dangling bonds with moisture, is inhibited.
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