Thin film transistor including a catalytic element for promoting crystallization of a semiconductor film
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United States of America Patent
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Feb 22, 2000
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app pub date -
Jun 24, 1997
filing date -
Mar 22, 1993
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Abstract
A crystalline silicon thin film transistor having an LDD (lightly doped drain) structure and a process for fabricating the same, which comprises introducing a catalyst element for accelerating crystallization at a concentration of 1.times.10.sup.15 cm.sup.-3 or more but less than 2.times.10.sup.19 cm.sup.-3 to the impurity region in an amorphous silicon film, crystallizing the amorphous film thereafter, and after forming gate electrode and gate insulating film, implanting an impurity in a self-aligned manner to establish an LDD structure.
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