E-beam/microwave gas jet PECVD method and apparatus for depositing and/or surface modification of thin film materials
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United States of America Patent
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Feb 22, 2000
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app pub date -
Jan 22, 1998
filing date -
Jan 22, 1998
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Abstract
A novel high speed, high quality plasma enhanced surface modification or CVD thin-film deposition method and apparatus. The invention employs both microwave and e-beam energy for creation of a plasma of excited species which modify the surface of substrates or are deposited onto substrates to form the desired thin film. The invention also employs a gas jet system to introduce the reacting species to the plasma. This gas jet system allows for higher deposition speed than conventional PECVD processes while maintaining the desired high quality of the deposited materials.
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