Process for removing etching residues, etching mask and silicon nitride and/or silicon dioxide

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United States of America Patent

PATENT NO 6033996
SERIAL NO

08969595

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Abstract

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Etching residue, etching mask and silicon nitride and/or silicon dioxide are etched or removed employing a composition containing a fluoride containing compound, water and certain organic solvents.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jagannathan, Rangarajan South Burlington, VT 29 547
Madden, Karen P Poughquag, NY 12 155
McCullough, Kenneth J Fishkill, NY 25 327
Okorn-Schmidt, Harald F Putnam Valley, NY 17 338
Pope, Keith R Danbury, CT 30 406
Rath, David L Stormville, NY 81 952

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