US Patent No: 6,034,747

Number of patents in Portfolio can not be more than 2000

Active matrix substrate and display device incorporating the same

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Importance

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Abstract

An active matrix substrate includes a gate line, a source line, and a thin film transistor provided in the vicinity of an intersection between the gate line and the source line. The thin film transistor includes a gate electrode connected to the gate line, a source electrode connected to the source line, and a drain electrode connected to a pixel electrode. An interlayer insulating film is provided over the thin film transistor, the gate line, and the source line. The pixel electrode is provided on the interlayer insulating film, and is connected to the drain electrode via a contact hole formed in the interlayer insulating film. A conductive layer extends over a channel region of the thin film transistor via the interlayer insulating film.

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First Claim

Related Publications

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Patent Owner(s)

Patent OwnerAddressTotal Patents
SHARP KABUSHIKI KAISHAOSAKA17714

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ban, Atsushi Nara, JP 73 960
Katayama, Mikio Ikoma, JP 92 2226
Shimada, Takayuki Yamatokoriyama, JP 92 2472
Tanaka, Shinya Osaka, JP 244 806

Cited Art

Patent Info (Count) # Cites Year
 
CASIO COMPUTER CO., LTD. (2)
5,032,883 Thin film transistor and method of manufacturing the same 95 1988
5,166,085 Method of manufacturing a thin film transistor 93 1990
 
ASICS CORPORATION (1)
4,307,521 Shoe sole 51 1978
 
GETNER FOUNDATION LLC (1)
5,499,123 Active matrix liquid crystal display cell with light blocking capacitor electrode above insulating layer 155 1993
 
LG DISPLAY CO., LTD. (1)
5,641,974 LCD with bus lines overlapped by pixel electrodes and photo-imageable insulating layer therebetween 247 1996
 
SEIKO EPSON CORPORATION (1)
4,648,691 Liquid crystal display device having diffusely reflective picture electrode and pleochroic dye 120 1980
 
SHARP KABUSHIKI KAISHA (1)
5,500,750 Manufacturing method of reflection type liquid crystal display devices having light shield elements and reflective electrodes formed of same material 105 1994
 
SONY CORPORATION (1)
5,585,951 Active-matrix substrate 221 1993

Patent Citation Ranking

Forward Cites

Patent Info (Count) # Cites Year
 
SANYO ELECTRIC CO., LTD. (9)
6,548,828 Thin-film transistor and method of manufacturing thin-film transistor with tapered gate of 20 degrees or less 9 1998
6,365,915 Thin film transistor 10 1999
6,628,363 Thin film transistor having a covered channel and display unit using the same 11 1999
6,252,248 Thin film transistor and display 57 1999
6,724,011 Display device 5 2000
6,613,618 Thin-film transistor and method of producing the same 6 2000
6,504,593 Display electrode arrangement for a reflection type liquid crystal display device 10 2000
6,555,419 Thin film transistor and manufacturing method of thin film transistor 4 2000
7,154,117 Display device 1 2004
 
LG DISPLAY CO., LTD. (4)
6,476,895 Liquid crystal display 5 2000
6,707,511 Reflective and transflective liquid crystal display device and its manufacturing method 4 2001
6,867,822 Reflective and transflective liquid crystal display device and its manufacturing method 3 2004
7,385,661 In-plane switching mode liquid crystal display device and method of manufacturing the same 3 2004
 
E INK CORPORATION (1)
6,750,473 Transistor design for use in the construction of an electronically driven display 115 2003
 
SAMSUNG DISPLAY CO., LTD. (1)
7,768,615 Liquid crystal display having wide viewing angle 0 2006
 
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (1)
6,713,783 Compensating electro-optical device including thin film transistors 63 1998
 
SHARP KABUSHIKI KAISHA (1)
7,880,822 Liquid crystal display panel and liquid crystal display device 1 2006
 
SONY CORPORATION (1)
6,335,772 Apparatus and method for a liquid crystal display device having an electrically-conductive light-shading layer formed on a smoothed layer 7 2000
 
OTHER [CHECK PATENT PROFILE FOR ASSIGNMENT INFORMATION] (1)
6,867,075 Manufacturing method of thin film transistor in which a total film thickness of silicon oxide films is defined 0 2003