Vertically stacked field programmable nonvolatile memory and method of fabrication
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United States of America Patent
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Mar 7, 2000
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N/A
app pub date -
Nov 16, 1998
filing date -
Nov 16, 1998
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Abstract
A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.
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