Method of selectively annealing damaged doped regions
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United States of America Patent
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Mar 21, 2000
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N/A
app pub date -
Feb 14, 1997
filing date -
Feb 14, 1997
priority date (Note) -
Expired
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Abstract
A method of forming a region of impurity in a semiconductor substrate with minimal damage. The method includes the steps of: forming a reaction-inhibiting impurity region in the semiconductor substrate to a depth below the semiconductor substrate; and applying laser energy to the semiconductor substrate at a sufficient magnitude to liquify the semiconductor substrate in the region.
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