Method for forming interconnection structure
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United States of America Patent
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Mar 21, 2000
Grant Date -
N/A
app pub date -
Apr 28, 1999
filing date -
Apr 30, 1998
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Disclosed herein is a method for forming a copper interconnect in which a substrate having the copper interconnect is exposed to atmosphere after the substrate is cooled to a temperature below 160.degree. C. under a non-oxidizable atmosphere. The exposure of the substrate to a relatively high temperature conventionally makes an electric resistance between interconnects on the substrate higher to prevent high integration. In accordance with the present invention, the above electric resistance can be reduced to smoothly realize the high integration because of the exposure of the substrate to a relatively low temperature.
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