Method of improving diffusion barrier properties of gate oxides by applying ions or free radicals of nitrogen in low energy
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United States of America Patent
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Mar 21, 2000
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N/A
app pub date -
Aug 8, 1997
filing date -
Aug 12, 1996
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Abstract
A method of providing a MOSFET having improved gate oxide diffusion barrier properties, which comprises providing a partially fabricated MOSFET having an exposed gate oxide surface. During MOSFET fabrication, the surface of the exposed gate oxide is converted to an oxynitride by applying one or both of ions or free radicals of nitrogen to the exposed gate oxide surface. Fabrication of the MOSFET is then completed in standard manner.
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