High permittivity ST thin film and a capacitor for a semiconductor integrated circuit having such a thin film

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United States of America Patent

PATENT NO 6040594
SERIAL NO

09205398

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Abstract

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A semiconductor integrated circuit integrating a high-permittivity thin film capacitor of strontium titanate on the same semiconductor chip, the thin film capacitor consisting of a pair of electrodes and essentially crystalline strontium titanate film therebetween which has a thin surface layer where concentration of titanium is higher than that of the rest of the crystalline strontium titanate film. In one embodiment according to the present invention, a thin film capacitor was fabricated by depositing a 200 nm thick film of strontium titanate at a temperature of 300.degree. C. on a 10 nm thick amorphous titanium oxide film which eventually became the thin surface layer, and subsequent annealing of 250.degree. C. for 30 min in an oxidation atmosphere. A structure and processes realized a thin film capacitor having a dielectric constant of 100 and leakage current density of 4.times.10.sup.-7 A/cm.sup.2 without degrading characteristics of transistors already fabricated in the same semiconductor chip.

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Patent Owner(s)

Patent OwnerAddress
FUJITSU LIMITED1-1 KAMIKODANAKA 4-CHOME NAKAHARA-KU KAWASAKI-SHI KANAGAWA 2118588 ?2118588

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Otani, Seigen Kawasaki, JP 8 79

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