Method for manufacturing semiconductor sensitive devices
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 28, 2000
Issued Date -
N/A
app pub date -
Sep 12, 1997
filing date -
May 7, 1985
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of manufacturing a semiconductor device having a non-single crystalline semiconductor layer including an intrinsic or substantially instrinsic silicon which contains hydrogen or halogen and is formed on a substrate in a reaction chamber which may have a substrate holder. Sodium is removed from the inside of the reaction chamber and/or the surface of the substrate holder to remove sodium therefrom so that the concentration of sodium in the semiconductor layer is preferably 5.times.10.sup.18 atoms/cm.sup.3 or less.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully