Process for fabricating a semiconductor opto-electronic component and component and matrix of components fabricated by this process
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United States of America Patent
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Apr 4, 2000
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N/A
app pub date -
Sep 12, 1997
filing date -
Sep 13, 1996
priority date (Note) -
Expired
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Abstract
An epitaxial deposition process is used to deposit materials that can be crystallized lattice matched to gallium arsenide onto an indium phosphide crystalline wafer. A material of this kind forms a metamorphic layer. Metamorphic layers of this kind constitute two semiconductor Bragg mirrors to form resonant cavities of surface emitting lasers of a matrix. This matrix is consolidated by a silicon support. Applications include optical telecommunications.
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