Design and fabrication of broadband surface-micromachined micro-electro-mechanical switches for microwave and millimeter-wave applications
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United States of America Patent
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Apr 4, 2000
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app pub date -
May 15, 1998
filing date -
May 15, 1998
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Abstract
Methods for the design and fabrication of micro-electro-mechanical switches are disclosed. Two different switch designs with three different switch fabrication techniques are presented for a total of six switch structures. Each switch has a multiple-layer armature with a suspended biasing electrode and a conducting transmission line affixed to the structural layer of the armature. A conducting dimple is connected to the conducting line to provide a reliable region of contact for the switch. The switch is fabricated using silicon nitride as the armature structural layer and silicon dioxide as the sacrificial layer supporting the armature during fabrication. Hydrofluoric acid is used to remove the silicon dioxide layer with post-processing in a critical point dryer to increase yield.
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