Method for growing single crystals from polycrystalline precursors
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United States of America Patent
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Apr 11, 2000
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N/A
app pub date -
Aug 14, 1998
filing date -
Aug 14, 1997
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Abstract
A method is disclosed for forming a single crystal relaxor based material, including the following steps: providing a seed single crystal plate, providing a first and second polycrystalline structure, bonding the top surface of the seed crystal plate to the outer surface of the first polycrystalline structure, bonding the bottom surface of the seed crystal plate to the outer surface of the second polycrystalline structure, and annealing the bonded structure.
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