Process for measuring the thickness and composition of thin semiconductor films deposited on semiconductor wafers
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 11, 2000
Grant Date -
N/A
app pub date -
Feb 26, 1998
filing date -
Feb 26, 1998
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The invention works by taking optical reflectance measurements on the deposited layers at different wavelengths and fitting the measured results to extract the thicknesses and compositions. The process of the present invention simultaneously measures the thicknesses of elemental and binary semiconductors' layers and the thicknesses and composition of ternary layers. Highly precise thickness and composition estimates and wafer maps of the growth rates and composition are provided by (1) measuring in a wavelength range at which the index of refractions are rapidly varying and (2) growing a special high reflectance test structure consisting of alternating layers of the materials to be measured.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully