Fabrication process of a semiconductor device including grinding of a semiconductor wafer
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United States of America Patent
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Apr 11, 2000
Issued Date -
N/A
app pub date -
Jul 29, 1999
filing date -
Sep 30, 1996
priority date (Note) -
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Abstract
A method of fabricating a semiconductor device includes the steps of protecting a front surface of a semiconductor substrate by an adhesive medium, grinding a rear surface of the semiconductor substrate in a state that the front surface is protected by the adhesive medium, removing the adhesive medium from the rear surface, and heating the semiconductor substrate, after the step of removing, to a temperature higher than a thermal decomposition temperature of an adhesive provided on the adhesive medium.
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