Method of manufacturing dynamic amount semiconductor sensor
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United States of America Patent
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Apr 11, 2000
Grant Date -
N/A
app pub date -
Jun 25, 1998
filing date -
Jun 26, 1997
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Abstract
In a method of manufacturing a dynamic amount sensor including a beam structure and a fixed electrode which are respectively supported by anchor parts of a substrate, opening portions are formed on a first semiconductor substrate where the anchor parts are to be formed. Each of the opening portions is composed of a plurality of stripe-like openings. Then a first thin film for forming the anchor parts and a second thin film are formed on the first semiconductor substrate in that order. After the surface of the second thin film is polished, a second semiconductor substrate is bonded to the polished surface of the second thin film. In this method, because the opening portions are composed of the plurality of stripe-like openings, the second thin film is flattened without having any steps thereon.
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