Process of fabricating a semiconductor device having nitrogen-containing silicon layer and refractory metal layer
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 11, 2000
Issued Date -
N/A
app pub date -
Apr 3, 1997
filing date -
Nov 4, 1994
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A field effect transistor available for 1 giga-bit dynamic random access memory device has a two-layer gate structure consisting of a lower layer of nitrogen-containing silicon and an upper layer of refractory metal, and the nitrogen-containing silicon effectively prevents the gate oxide layer from alkaline metals diffused from the refractory metal.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully