Chamber monitoring and adjustment by plasma RF metrology
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United States of America Patent
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Apr 18, 2000
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N/A
app pub date -
May 8, 1996
filing date -
May 8, 1996
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Abstract
A method and apparatus for monitoring a parameter of the RF power applied to a plasma-enhanced chemical vapor deposition (PECVD) chamber. The parameter is used to monitor an aspect of the chamber or a process in the chamber. In particular, the parameter can be used to determine whether the susceptor is properly aligned, determine the spacing of the susceptor from the gas discharge head, determine whether the wafer is properly aligned on the susceptor, determine whether there has been any deterioration of the susceptor or the gas discharge head, and determine whether a chamber clean operation is complete.
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