Process for fabricating semiconductor device
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United States of America Patent
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Apr 18, 2000
Issued Date -
N/A
app pub date -
Sep 5, 1996
filing date -
Sep 7, 1993
priority date (Note) -
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Abstract
A process for fabricating a semiconductor device comprising the step of, after patterning the silicon film crystallized to a low degree by thermally annealing an amorphous silicon film into an island by etching, irradiating an intense light of a visible light or a near infrared radiation to effect a short-period annealing (RTA) to the silicon film of low crystallinity. Thus, the crystallinity of the silicon film is improved and the silicon film is densified in a short-period.
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