Surface emitting semiconductor laser
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United States of America Patent
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Apr 18, 2000
Grant Date -
N/A
app pub date -
Apr 2, 1998
filing date -
Apr 3, 1997
priority date (Note) -
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Abstract
Two semiconductor layers of the laser form a tunnel junction enabling an electrical current for pumping the laser to pass from an N doped semiconductor Bragg mirror to a P doped injection layer belonging to the light-amplifying structure. The Bragg mirror co-operates with another mirror of the same type having the same doping to include said structure in an optical cavity of the laser. In a variant, the tunnel junction may be buried and located so as to constitute confinement means for said pumping current. The laser can be used in an optical fiber communications network.
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