Laser diode with an ion-implanted region
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United States of America Patent
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Apr 25, 2000
Issued Date -
N/A
app pub date -
Sep 4, 1998
filing date -
Nov 22, 1995
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Abstract
A semiconductor laser device is disclosed in which the device comprises one or more ion-implanted regions as a means to decrease the occurrence of device failures attributable to dark-line defects. The ion-implanted regions, which are formed between the laser gain cavity and the regions of probable dark-line defect origination, serve to modify the electrical, optical, and mechanical properties of the device lattice structure, thus reducing or eliminating the propagation of dark-line defects emanating from constituent defects or bulk material imperfections which may be present in the device.
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