Cryogenic annealing of sputtering targets
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United States of America Patent
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May 2, 2000
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N/A
app pub date -
Aug 13, 1997
filing date -
Aug 13, 1997
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Abstract
Sputtering targets are cryogenically annealed to provide a uniformly dense molecular structure by placing the target in a temperature-controlled cryogenic chamber and cooling the chamber to a cryogenic temperature at a controlled rate. The target is maintained at a cryogenic temperature to cryogenically anneal the target and the target is subsequently returned to ambient or elevated temperature. Improvements in sputtered particle performance and early life film uniformity are achieved with the cryo-annealed targets.
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