Electropolishing copper film to enhance CMP throughput

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United States of America Patent

PATENT NO 6056864
SERIAL NO

09170220

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Abstract

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In-laid metal, e.g., copper or copper alloy, contacts and conductive routing patterns are formed in recesses in the surface of a substrate by a damascene-type process, comprising depositing a layer of an electrically conductive material filling the recesses and covering the substrate surface, reducing the thickness of the layer by a process providing a faster rate of layer removal than that obtained by chemical-mechanical polishing (CMP), and subjecting the remaining layer thickness to CMP processing to (a) substantially remove the remaining layer thickness and (b) render the exposed upper surface of the material filling the recesses substantially coplanar with the substrate surface, whereby increased manufacturing throughput, greater planarity, and reduced defects are obtained.

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Patent Owner(s)

Patent OwnerAddress
ADVANCED MICRO DEVICES INC2485 AUGUSTINE DRIVE SANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheung, Robin W Cupertino, CA 48 1702

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