Coarse grain polycrystalline gallium antimonide thermophotovoltaic cell
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United States of America Patent
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May 2, 2000
Grant Date -
N/A
app pub date -
Sep 1, 1999
filing date -
Sep 10, 1998
priority date (Note) -
Expired
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Abstract
A TPV cell apparatus with a base region of GaSb crystals. The GaSb crystals are of varying orientations and joined at grain boundaries. A surface region is provided on the GaSb crystals. The GaSb crystals are Tellurium doped N-type GaSb and the surface region is thin Zinc doped P-type GaSb cells. The surface region faces an infrared source. A bus region is connected to a metal grid connected which is in contact with the surface region of the cell. A continuous metal layer is in contact with the GaSb crystals. A multilayer coating is provided on a front side of the cell. The multilayer coating forms an infrared filter for transmitting convertible infrared energy to the cell and for reflecting as much of non-convertible infrared energy back to the IR source as possible. A TPV generator may be provided with the TPV cells.
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