Semiconductor device having a tri-layer gate insulating dielectric
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United States of America Patent
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May 2, 2000
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N/A
app pub date -
Dec 19, 1997
filing date -
Dec 19, 1997
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Abstract
A semiconductor device having a gate insulating tri-layer includes a substrate, a nitrogen-containing layer disposed on the substrate, a first dielectric layer disposed over the nitrogen containing layer, a second dielectric layer disposed over the first dielectric layer, and a gate electrode disposed over the second dielectric layer. One of the first and second dielectric layers is formed using an oxide having a dielectric constant ranging from 4 to 100 and the other of the first and second dielectric layers is formed using an oxide having a higher dielectric constant ranging from 10 to 10,000.
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