Method for making heterostructure thermionic coolers
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United States of America Patent
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May 9, 2000
Issued Date -
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app pub date -
Mar 29, 1999
filing date -
Dec 17, 1996
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Abstract
A heterostructure thermionic cooler and a method for making thermionic coolers, employing a barrier layer of varying conduction bandedge for n-type material, or varying valence bandedge for p-type material, that is placed between two layers of material. The barrier layer has a high enough barrier for the cold side to only allow 'hot' electrons, or electrons of high enough energy, across the barrier. The barrier layer is constructed to have an internal electric field such that the electrons that make it over the initial barrier are assisted in travel to the anode. Once electrons drop to the energy level of the anode, they lose energy to the lattice, thus heating the lattice at the anode. The barrier height of the barrier layer is high enough to prevent the electrons from traveling in the reverse direction.
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Patent Owner(s)
- THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
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Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Bowers, John E | Santa Barbara, CA | 70 | 1682 |
Shakouri, Ali | Santa Barbara, CA | 30 | 1524 |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
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