Susceptor for plasma CVD equipment and process for producing the same
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United States of America Patent
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May 16, 2000
Grant Date -
N/A
app pub date -
Jun 2, 1998
filing date -
Jun 6, 1997
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Provided are a susceptor for a plasma CVD equipment, characterized in that the surface of the susceptor has raised and depressed portions which are continuously formed, and a steep protrusion is completely removed in the raised portion, and a method of roughening a surface of a susceptor for a plasma CVD equipment, which comprises a step of mechanically flattening the surface of the susceptor, a step of shot-blasting the surface of the thus-flattened susceptor, and a step of polishing the shot-blasted surface of the susceptor chemically, electrochemically and/or mechanically, a steep protrusion being completely removed from the surface of the susceptor, and an Ra value of the susceptor surface being 1 .mu.m.ltoreq.Ra.ltoreq.8 .mu.m. Since the susceptor of the present invention reduces a rate of contact between a wafer substrate and the susceptor surface, adsorption due to charging can be prevented. Since the protrusion is completely removed from the surface of the susceptor, there is no fear of particle contamination due to abrasion. Since the Ra value of the susceptor surface is not changed due to abrasion upon using the susceptor of the present invention, the process stability is improved, and the film-forming treatment can be conducted with a high reproducibility.
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