Semiconductor device having a portion of gate electrode formed on an insulating substrate
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 16, 2000
Grant Date -
N/A
app pub date -
Jun 27, 1996
filing date -
Jan 17, 1996
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
On an insulating film a mesa-isolation silicon layer is formed, in which a channel region and source/drain regions are included. A gate insulating film and a conducting layer as a part of a gate electrode are stacked on the mesa-isolation silicon layer. A sidewall of an insulating material is formed on side surfaces of the mesa-isolation silicon layer, gate insulating film, and conducting layer at an end portion of the channel region of the mesa-isolation silicon layer, and a gate electrode is formed on the conducting layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully