Ballast resistance for producing varied emitter current flow along the emitter's injecting edge
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United States of America Patent
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May 16, 2000
Issued Date -
N/A
app pub date -
Jun 7, 1995
filing date -
Oct 8, 1992
priority date (Note) -
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Abstract
A semiconductor device includes an emitter region, a contact region, and a resistive medium. The resistive medium is connected between the contact region and the emitter region. The contact region and the emitter region each include an edge facing each other. At least a portion of the emitter region edge and at least a portion of the contact region edge are non-parallel relative to each other. This configuration enables an emitter ballast resistance to be provided with varied emitter current flow along the injecting edge of the emitter. Furthermore, by including an additional contact and an additional resistive medium between the contacts, the ballast resistance of the semiconductor device can be increased without decreasing the figure of merit of the device.
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